The red-emitting Sr ₂ Si ₅ N ₈ :Eu ²⁺ phosphor with a superior quantum efficiency and suitable emission spectrum has been widely used as a promising down-conversion material in white light-emitting diodes. However, its thermal degradation under high temperature handicaps its large scale application, and therefore must be reduced. Here, we proposed to increase the thermal stability of Sr ₂ Si ₅ N ₈ :Eu ²⁺ by coating a nanometer-order Al ₂ O ₃ film on each phosphor particle using an atomic layer deposition approach in a fluidized bed reactor. The deposited Al ₂ O ₃ layer was quite uniform and conformal when using O ₃ as the oxidizer, and its thickness could be controlled by the dosage type, deposition temperature and cycle numbers, which largely affects the photoluminescence properties and thermal degradation of the title phosphor. Thermal gravimetric analysis results showed that the oxidation temperature of the coated phosphor increased from 700 to 850 °C, suggesting that the coating layer has the function of anti-oxidation. Meanwhile, the coated phosphor particle surface became hydrophobic. Consequently, the thermal degradation of phosphor powders in air at 200 °C was greatly reduced and the stability of the fabricated LEDs with coated powders was also improved. Prospectively, the proposed approach provides a new strategy to improve the thermal stability of other phosphors.

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To modify the luminescence properties of Ce³⁺-doped Y₃Al₅O₁₂ (YAG) phosphors, they have been coated with a carbon layer by chemical vapor deposition and subsequently heat-treated at high temperature under N₂ atmosphere. Luminescence of the carbon coated YAG:Ce³⁺ phosphors has been investigated as a function of heat-treatment at 1500 and 1650 °C. The 540 nm emission intensity of C@YAG:Ce³⁺ is the highest when heated at 1650 °C, while a blue emission at 400-420 nm is observed when heated at 1500 °C but not at 1650 °C. It is verified by X-ray diffraction (XRD) that the intriguing luminescence changes are induced by the formation of new phases in C@YAG:Ce³⁺-1500 °C, which disappear in C@YAG:Ce³⁺-1650 °C. In order to understand the mechanisms responsible for the enhancement of YAG:Ce³⁺ emission and the presence of the blue emission observed for C@YAG:Ce³⁺ -1500 °C, the samples have been investigated by a combination of several electron microscopy techniques, such as HRTEM, SEM-CL, and SEM-EDS. This local and cross-sectional analysis clearly reveals a gradual transformation of phase and morphology in heated C@YAG:Ce³⁺ phosphors, which is related to a reaction between C and YAG:Ce³⁺ in N₂ atmosphere. Through reaction between the carbon layer and YAG host materials, the emission colour of the phosphors can be modified from yellow, white, and then back to yellow under UV excitation as a function of heat-treatment in N₂ atmosphere.

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One of the biggest problems in white light-emitting diodes (WLEDs) is the moisture-induced degradation of phosphors. This paper proposes a simple and feasible surface modification method to solve it, whereby a hydrophobic surface layer is developed on the surface of the phosphors. The particular case of orange-red-emitting Sr₂Si₅N₈:Eu²⁺ (SSN) phosphor was investigated. The mechanism to develop the hydrophobic layer involves hydrolysis and polymerization of tetraethylorthosilicate (TEOS) and polydimethylsiloxane (PDMS). The experimental results showed that the surface layer of SSN phosphor was successfully modified to a hydrophobic nanolayer (8 nm) of amorphous silicon dioxide that contains CH₃ groups in the surface. This hydrophobic surface layer gives the modified phosphor superior stability in high-pressure water steam conditions at 150°C.

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Synthesizing pure phase Ba3Si6O9N4 by the conventional solid-state reaction method is challenging because of easily formed secondary phase Ba3Si6O12N2 showing similar crystal structure. In this work, an alternative low temperature synthesis method is presented, and a series of green to blue emitting (Ba, Sr)3Si6O9N4: Eu2+ phosphors were prepared by a mechanochemical activation route. Variations in photoluminescence properties and crystal structure, as induced by the change in phosphor composition, were investigated. Under ultraviolet-light excitation, Ba3Si6O9N4: Eu2+ phosphor exhibited a strong narrow green emission at 518 nm and simultaneously a weak emission at 405 nm, which are ascribed to different Eu/Ba sites in Ba3Si6O9N4 lattice proved by Density Functional Theory (DFT) calculations. A continuous green to blue emission in (Ba, Sr)3Si6O9N4: Eu2+ phosphors could be achieved by tuning the crystal structure and local coordination environment acting on Eu2+ with Sr/Ba substitution. More Sr/Ba substitution improved thermal quenching and resulted in a different characteristic of emission peak shift upon increasing the temperature.@en

Many strategies have been adopted to improve thermal degradation of phosphors. Because of the stability and high transmittance of graphene, here we report a novel method of carbon coating on BaMgAl₁₀O₁₇:Eu²⁺ (BAM) phosphor particles through chemical vapor deposition. The chemical composition, microstructure, and luminescence performance of carbon-coated BAM were characterized carefully. This coating can be controlled within 3-10 atomic layers, depending on the reaction time. Because of the decrease of surface defects and the effective weakening effect of oxidizing Eu²⁺ to Eu³⁺ after carbon coating, different layer numbers showed an obvious effect on the optical properties of carbon-coated BAM. Carbon-coated BAM phosphors had higher emission intensity and better oxidation resistance at high temperature than uncoated BAM phosphors. These results indicate that the method of carbon coating on phosphor particles is a promising way to improve the luminescence properties of other phosphors used in lighting and display devices.

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Y4Si2O7N2: Eu2+ phosphor has been prepared by a pretreatment method. Reduction in Eu3+ ions into Eu2+ by the use of hydrogen iodide (HI) is verified by X-ray absorption near-edge structure (XANES) and electrode potential analysis. Y4Si2O7N2: Eu2+ phosphor has a broad emission band in the range of 400-500 nm. Furthermore, the effect of Zr doping on the structure and luminescence properties of Y4Si2O7N2: Eu2+ phosphor is researched. It found that the Zr doping leads to an emission blueshift, and improves the luminescence intensity and thermal quenching behavior of Y4Si2O7N2: Eu2+ phosphors. Prospectively, the pretreatment approach could be extended to develop other Eu2+-doped compounds.@en