A 6800-μ m2 Resistor-Based Temperature Sensor with ±0.35 °c (3σ) Inaccuracy in 180-nm CMOS

Journal article (2019)

Authors

J. Angevare Electronic Instrumentation - EEMCS
K.A.A. Makinwa Microelectronics
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
Copyright: © 2019 J. Angevare, K.A.A. Makinwa
DOI: https://doi.org/10.1109/JSSC.2019.2921450
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μ m2, thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3 σ) inaccuracy from-35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1 σ) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.

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