A 6800-μ m2 Resistor-Based Temperature Sensor with ±0.35 °c (3σ) Inaccuracy in 180-nm CMOS
Jan Angevare (TU Delft - Electronic Instrumentation)
Kofi AA Makinwa (TU Delft - Microelectronics)
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Abstract
This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μ m2, thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3 σ) inaccuracy from-35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1 σ) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.