Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

Journal Article (2011)
Author(s)

P.C. Post

A. Mohammadi Gheidari (TU Delft - ImPhys/Microscopy Instrumentation & Techniques)

Cornelis W. Hagen (TU Delft - ImPhys/Microscopy Instrumentation & Techniques)

P Kruit (TU Delft - ImPhys/Microscopy Instrumentation & Techniques)

Research Group
ImPhys/Microscopy Instrumentation & Techniques
DOI related publication
https://doi.org/10.1116/1.3656027
More Info
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Publication Year
2011
Language
English
Research Group
ImPhys/Microscopy Instrumentation & Techniques
Issue number
6
Volume number
29

Abstract

Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe3 as a precursor gas, 14 × 14 arrays of Pt-containing dots were deposited on a W/Si 3N4/W membrane, with each array of 196 dots deposited in a single exposure. The authors demonstrate that by shifting the array of beams over distances of several times the beam pitch, one can deposit rows of closely spaced dots that, although originating from different beams within the array, are positioned within 5 nm of a straight line.

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