Electrothermal characterization of silicon-on-glass VDMOSFETs

Journal article (2005)

Authors

N Nenadovic Electronic Components, Technology and Materials - EEMCS
H. Schellevis Electronic Components, Technology and Materials - EEMCS
V Cuoco Old - EWI Ch. Integrated Sensing Devices
A Griffo External organisation
SJCh Theeuwen External organisation
L.K. Nanver Electronic Components, Technology and Materials - EEMCS
HFF Jos External organisation
JW Slotboom Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
More Info
expand_more

Published Date

2005

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistance values are extracted for each design. The influence of the thermal resistance on RF performance is analyzed, and it is shown that strong electrothermal feedback severely lowers the power capability and strongly increases the operating temperature. A combination of low-thermal contacting and surface mounting to thermally conducting printed circuit board is shown to be very efficient in reducing the large thermal resistance. Numerical thermal simulations demonstrate that surface-mounted silicon-on-glass transistors can have lower thermal resistance than the bulk-silicon device with a wafer thickness reduced down to 100 ¿m.