Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 °C

Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

Slender piezoelectric cantilevers of high quality AlN layers sputtered on Ti thin film for MEMS actuators

Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst

Shear mode resonators based on aluminum nitride round membranes with a ring-shaped electrode

The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

A molybdenum MEMS microhotplate for high-temperature operation

Homogeneous superconducting phase in TiN film: A complex impedance study

Enhancement of AlN slender piezoelectric cantilevers actuation by PECVD silicon nitride coating

Contact resistance of low-temperature carbon nanotube vertical interconnects

Self-biased low loss conductor featured with skin effect suppression for high quality RF passives

High-quality integrated inductors based on multilayered meta-conductors

Encapsulated aluminum nitride SAW devices for liquid sensing applications

Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects

Sputtered molybdenum as conductive material for high-temperature microhotplates

Fabrication of AlN slender piezoelectric cantilevers for high-speed MEMS actuations

Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology

Single-grain Si TFTs for high-speed flexible electronics

High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS

Process for low temperature deposition of strain gauge materials based on chromium nitride thin films