Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

Journal article (2021)

Authors

Xuanwu Kang Chinese Academy of Sciences, Fudan University
Y. Sun Electronic Components, Technology and Materials - EEMCS , Chinese Academy of Sciences, Shenzhen Institute of Wide-bandgap Semiconductors
Yingkui Zheng Chinese Academy of Sciences
Ke Wei Chinese Academy of Sciences
Hao Wu Chinese Academy of Sciences, Fudan University
Yuanyuan Zhao Chinese Academy of Sciences
Xinyu Liu Chinese Academy of Sciences
Kouchi Zhang Fudan University
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2021 Xuanwu Kang, Y. Sun, Yingkui Zheng, Ke Wei, Hao Wu, Yuanyuan Zhao, Xinyu Liu, Kouchi Zhang
DOI: https://doi.org/10.1109/TED.2021.3050739
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Published Date

2021

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON/Iscriptscriptstyle OFF of 1012 with a low leakage current of ∼ 10-9 A/cm2@-10 V, high forward current density of 5.2 kA/cm2 at 3 V in dc, a low differential specific ON-resistance (Rscriptscriptstyle ONsp) of 0.3 m Ω cm2, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) I-V test was carried out and 53 kA/cm2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.

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