Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
Xuanwu Kang (Chinese Academy of Sciences, Fudan University)
Yue Sun (Shenzhen Institute of Wide-bandgap Semiconductors, Chinese Academy of Sciences, TU Delft - Electronic Components, Technology and Materials)
Yingkui Zheng (Chinese Academy of Sciences)
Ke Wei (Chinese Academy of Sciences)
Hao Wu (Fudan University, Chinese Academy of Sciences)
Yuanyuan Zhao (Chinese Academy of Sciences)
Xinyu Liu (Chinese Academy of Sciences)
Guoqi Zhang (Fudan University)
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Abstract
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON/Iscriptscriptstyle OFF of 1012 with a low leakage current of ∼ 10-9 A/cm2@-10 V, high forward current density of 5.2 kA/cm2 at 3 V in dc, a low differential specific ON-resistance (Rscriptscriptstyle ONsp) of 0.3 m Ω cm2, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) I-V test was carried out and 53 kA/cm2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.