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9 records found

Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-b ...
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved ...
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark ...
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio o ...
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 ...
The deployment of fifth-generation (5G) networks requires more closely spaced wireless infrastructures with a high output power to deal with high-frequency signal attenuation issues. Microwave power limiters have been widely used in the RF front-end in various wireless communicat ...
In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GE ...
The diversified system requirements have been continuously growing to drive the development of a variety of new package styles. Wafer-Level Packaging (WLP) technology has drawn attention with its thinner package due to the removal of substrate and thus higher performance. With th ...
The diversified system requirements have been continuously growing to drive the development of a variety of new package styles. Wafer-Level Packaging (WLP) technology has drawn attention with its thinner package due to the removal of substrate and thus higher performance. With th ...