High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation
Yue Sun (Chinese Academy of Sciences, TU Delft - Electronic Components, Technology and Materials, Shenzhen Institute of Wide-bandgap Semiconductors)
Xuanwu Kang (Chinese Academy of Sciences)
Shixiong Deng (National University of Defense Technology, Hebei Semiconductor Research Institute)
Yingkui Zheng (Chinese Academy of Sciences)
Ke Wei (Chinese Academy of Sciences)
Linwang Xu (Hebei Semiconductor Research Institute)
Hao Wu (Chinese Academy of Sciences)
Xinyu Liu (Chinese Academy of Sciences)
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Abstract
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.
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