Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
Yue Sun (TU Delft - Electronic Components, Technology and Materials)
Xuanwu Kang (Chinese Academy of Sciences)
Yingkui Zheng (Chinese Academy of Sciences)
Jiang Lu (Chinese Academy of Sciences)
Xiaoli Tian (Chinese Academy of Sciences)
Ke Wei (Chinese Academy of Sciences)
Hao Wu (Chinese Academy of Sciences)
Xinyu Liu (Chinese Academy of Sciences)
Guo Qi Z Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.
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