Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Review (2019)

Authors

Y. Sun Electronic Components, Technology and Materials - EEMCS
Xuanwu Kang Chinese Academy of Sciences
Yingkui Zheng Chinese Academy of Sciences
Jiang Lu Chinese Academy of Sciences
Xiaoli Tian Chinese Academy of Sciences
Ke Wei Chinese Academy of Sciences
Hao Wu Chinese Academy of Sciences
Xinyu Liu Chinese Academy of Sciences
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2019 Y. Sun, Xuanwu Kang, Yingkui Zheng, Jiang Lu, Xiaoli Tian, Ke Wei, Hao Wu, Wenbo Wang, Xinyu Liu, Kouchi Zhang
DOI: https://doi.org/10.3390/electronics8050575
More Info
expand_more

Published Date

2019

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.