Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Journal article (2021)

Authors

Xuanwu Kang Chinese Academy of Sciences
Yingkui Zheng Chinese Academy of Sciences
Hao Wu Chinese Academy of Sciences
Ke Wei Chinese Academy of Sciences
Y. Sun Chinese Academy of Sciences, Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Xinyu Liu Chinese Academy of Sciences
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
AlGaN/GaN Lateral Gate-edge termination High breakdown voltage Low turn-on voltage Schottky barrier diode
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Published Date

2021

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN x, a low reverse leakage current (∼10 nA mm-1@-600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 μA mm-1) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R on,sp of 1.49 mΩ cm2 for thin-barrier GET SBDs with an anode-to-cathode distance (L AC) of 15 μm, yielding a Baliga's figure of merit of 2120 MW cm-2. Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.