PureB multi-guard ring structures for detector applications

Journal article (2016)

Authors

N. Golshani Electronic Components, Technology and Materials - EEMCS
J. Derakhshandeh Kheljani Electronic Components, Technology and Materials - EEMCS
C.I.M. Beenakker Electronic Components, Technology and Materials - EEMCS
R. Ishihara Quantum Integration Technology
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
X-ray detector Avalanche breakdown Boron layer Breakdown voltage Multi-guard ring Silicon drift detector
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Published Date

2016

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The breakdown voltage is an important parameter in designing X-ray detectors such as silicon drift detectors (SDDs). In SDDs the complete thickness of the wafer has to be depleted to enable the detection of different energies of X-rays. A high voltage is required to have a fully depleted region while keeping the leakage current low. Multi-guard ring structures are designed to meet both a low leakage current and a high breakdown voltage using deposited PureB layers. To obtain a low leakage current, PureB layers were used. In multi-guard ring structures, parameters such as gap width, number of the rings and overlap of the metal field plate with the oxide have been designed to obtain higher breakdown voltage. Parameters such as gap size, oxide charge, bulk doping concentration and field plate design have an influence on the potential distribution of the guard rings. The designed structure works up to the limit of the measurement systems (1100 V) with very low leakage current in the range of 1.5-3 nA/cm2 for the detector.