A new hermetic sealing method for ceramic package using nanosilver sintering technology

Journal Article (2018)
Author(s)

Hao Zhang (Changzhou Institute of Technology Research for Solid State Lighting, TU Delft - Electronic Components, Technology and Materials)

Yang Liu (Harbin University of Science and Technology)

Lingen Wang (Boschman Technologies)

Jiajie Fan (Beijing Research Center, Changzhou Institute of Technology Research for Solid State Lighting, Hohai University)

Xuejun Fan (Changzhou Institute of Technology Research for Solid State Lighting, Lamar University)

Fenglian Sun (Harbin University of Science and Technology)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials, Changzhou Institute of Technology Research for Solid State Lighting)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.microrel.2017.12.030
More Info
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Publication Year
2018
Language
English
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
Accepted author manuscript
Journal title
Microelectronics Reliability
Volume number
81
Pages (from-to)
143-149
Downloads counter
340
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Institutional Repository
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Abstract

High reliable packaging materials are needed for electronics when they work at harsh environments. Among which, the nanosilver material has been widely studied and applied in power electronics due to its low processing temperature and high reliability. This paper investigates the bonding properties of nanosilver sintered hermetic cavity. There are two kinds of lids used in this study, including copper lid and silicon lid. The X-ray and C-Mode Scanning Acoustic Microscopy (C-SAM) results revealed that delamination tended to happen in Cu lid sintered cavity as the recovery of deformed Cu lid was hindered by sintered dense Ag layer. However, no delamination or cracks were found in Si lid sintered cavity. Finite element analysis (FEA) method was used to investigate the effects of lid materials on the stress distribution of lid. The results indicated that the Cu lid sintered cavity showed a much higher stress than the Si lid sintered cavity under the sintering parameters of 250 °C and 10 MPa. There is no obvious change in the stress distribution areas on Cu lid with the increasing of pressures from 5 to 30 MPa. However, the distribution area of stress on Si lid expanded obviously only when the sintering pressure increased to 30 MPa. With the increase of sintering pressures from 5 to 30 MPa, the maximum stresses on Cu lid are almost the same, while increasing trend was found on Si lid.

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