Room temperature GaAsSb array photodetectors

None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None

Room temperature GaAsSb array photodetectors

Conference Paper (2018)

Author(s)

Ziyuan Li (Australian National University)

Simeon Trendafilov (Munitions Directorate)

Monica T. Allen (Munitions Directorate)

Jeffery Allen (Munitions Directorate)

Ahmed Alabadla (Australian National University)

Qian Gao (Australian National University)

Xiaoming Yuan (Australian National University, Central South University China)

P. Caroff (Microsoft Quantum Lab Delft, Australian National University, TU Delft - QRD/Kouwenhoven Lab)

Hark Hoe Tan (Australian National University)

More Authors (External organisation)

Research Group

QRD/Kouwenhoven Lab

DOI related publication

https://doi.org/10.1109/RAPID.2018.8508949

VLS Nanowire Photodetector GaAsSb III-V semiconductor

To reference this document use:

https://resolver.tudelft.nl/uuid:fcad01cb-86c9-48cd-a1e3-44c510d39dde

More Info

expand_more

Publication Year

2018

Language

English

Research Group

QRD/Kouwenhoven Lab

Pages (from-to)

143-145

ISBN (electronic)

978-1-5386-5349-4

Abstract

GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.

No files available

Metadata only record. There are no files for this record.