Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces
Sebastian Kölling (Polytechnique Montreal)
L.E.A. Stehouwer (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
B. Paquelet Wuetz (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - BUS/Quantum Delft, TU Delft - QuTech Advanced Research Centre)
Giordano Scappucci (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab)
O. Moutanabbir (Polytechnique Montreal)
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Abstract
Atom probes generate three-dimensional atomic-scale tomographies of material volumes corresponding to the size of modern-day solid-state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute-force search, the current dominant reconstruction protocol to generate tomographic three-dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub-nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic-scale characterization of buried interfaces in semiconductor heterostructures.
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