Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts

Journal article (2016)

Authors

F. Qu QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
J. van Veen QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
F.K. de Vries QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft
A.J.A. Beukman QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft, QuTech Advanced Research Centre
M Wimmer QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, (OLD) Chair of Relation to Practice ur
Wei Yi HRL Laboratories
Andrey A. Kiselev HRL Laboratories
Binh Minh Nguyen HRL Laboratories
Leo P. Kouwenhoven QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
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Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
Quantum point contact Conductance quantization G-factor anisotropy Electron effective mass InSb quantum well
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Published Date

2016

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1| = 26) and out-of-plane (|g1| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.