An integrated 132-147GHz power source with +27dBm EIRP
Akshay Visweswaran (IMEC-Solliance)
Alexander Haag (Karlsruhe Institut für Technologie)
Carmine De Martino (TU Delft - Electronics)
Karina Schneider (Karlsruhe Institut für Technologie)
Tim Maiwald (Friedrich-Alexander-Universität Erlangen-Nürnberg)
Bastien Vignon (IMEC-Solliance)
Klaus Aufinger (Infineon Technologies AG)
Marco Spirito (TU Delft - Electronics)
Thomas Zwick (Karlsruhe Institut für Technologie)
Piet Wambacq (IMEC-Solliance)
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Abstract
We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13μm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 %. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80% over a 16% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.
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