Print Email Facebook Twitter Location of lanthanide impurity levels in the III-V semiconductor GaN Title Location of lanthanide impurity levels in the III-V semiconductor GaN Author Dorenbos, P. Van der Kolk, E. Faculty Applied Sciences Department Radiation, Radionuclides and Reactors Date 2006-08-10 Abstract Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and conduction bands in GaN is presented. The authors will demonstrate that the quantum efficiency of luminescence from Pr3+, Eu3+, Tb3+, and Yb3+ depends on the location of the lanthanide levels. Level location also controls electron acceptor and electron donor properties of lanthanide ions. Subject gallium compoundsIII-V semiconductorswide band gap semiconductorsimpurity statesground statesvalence bandsconduction bandsphotoluminescencepraseodymiumeuropiumterbiumytterbium To reference this document use: http://resolver.tudelft.nl/uuid:4200db54-ceff-4003-aa76-8525f3b43bed DOI https://doi.org/10.1063/1.2336716 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v89/i6/p061122/s1 Source Applied Physics Letters, 89 (6), 2006 Part of collection Institutional Repository Document type journal article Rights (c) 2006 The Author(s); American Institute of Physics Files PDF Dorenbos_2006.pdf 274.3 KB Close viewer /islandora/object/uuid%3A4200db54-ceff-4003-aa76-8525f3b43bed/datastream/OBJ/view