Characterization of PCB Embedded Package Materials for SiC MOSFETs

Hou, F.; Wang, W.; Lin, Tingyu; Cao, Liqiang; Zhang, Kouchi; Ferreira, Jan Abraham

doi:10.1109/TCPMT.2019.2904533

Characterization of PCB Embedded Package Materials for SiC MOSFETs

Title

Characterization of PCB Embedded Package Materials for SiC MOSFETs

Author

Hou, F. (TU Delft DC systems, Energy conversion & Storage; Institute of Microelectronics of Chinese Academy of Sciences)
Wang, W. (TU Delft DC systems, Energy conversion & Storage)
Lin, Tingyu (National Center for Advanced Packaging)
Cao, Liqiang (Chinese Academy of Sciences; National Center for Advanced Packaging)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)
Ferreira, Jan Abraham (TU Delft ESE Programmes)

Date

2019

Abstract

In this paper, a novel fan-out panel-level printed circuit board (PCB) embedded package technology for silicon carbide (SiC) MOSFET power module is presented to address parasitic inductances, heat dissipation, and reliability issues that are inherent with aluminum wires used in conventional packaging scheme. To withstand high temperature beyond 175 °C and high voltage over 1.2 kV and improve thermomechanical reliability of the fan-out panel-level PCB embedded SiC power module, bismaleimide-triazine (BT) laminate and prepreg with high-temperature stability, high dielectric strength, coefficient of thermal expansion (CTE) matching with SiC, and high T-g are selected as PCB embedded package materials. Then, high-temperature stabilities, dielectric breakdown strength, and thermomechanical performances of the embedded materials are characterized. The experimental results show that the PCB embedded materials can withstand high temperature beyond 200 °C and a high voltage above 1.2 kV. T-g is as high as over 260 °C, and CTE is matching with SiC. Besides, in order to provide one guideline for the high-temperature and high-pressure laminating process during the PCB embedded SiC MOSFETs packaging, cure kinetics of BT prepreg are analyzed. The results show that 1-h curing time at 280 °C curing temperature and 2-h curing time at 210 °C curing temperature can ensure the full cure of the BT prepreg.

Subject

High temperature
high voltage
material characterization
printed circuit board (PCB) embedded package
silicon carbide (SiC) MOSFETs

To reference this document use:

http://resolver.tudelft.nl/uuid:f6d1d9d2-4863-41ea-aa07-0c6e36e4623c

DOI

https://doi.org/10.1109/TCPMT.2019.2904533

ISSN

2156-3950

Source

IEEE Transactions on Components, Packaging and Manufacturing Technology, 9 (6), 1054-1061

Bibliographical note

Accepted author manuscript