Print Email Facebook Twitter A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET Title A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET Author Yuan, Wucheng (Southern University of Science and Technology) Liu, Ke (Southern University of Science and Technology) Wang, S. (TU Delft Bio-Electronics) Tan, C. (TU Delft Electronic Components, Technology and Materials) Ye, H. (Southern University of Science and Technology) Date 2022 Abstract The limitation of Silicon based power MOSFET was broken by the super-junction (SJ) structure, which can provide lower specific on-resistance and higher breakdown voltage compared with the conventional power MOSFET structure. Multi-epitaxial and multi-ion-implant technology, as a mature manufacturing process of the SJ structure, has been widely used in the field of SJ-MOSFET. Therefore, this process is applied to construct the cell structure of 650V SJ-MOSFET in our study. Based on practical application, high current caused by unexpected short circuit will induce an increasing of the internal temperature of SJ-MOSFET, which leads to an irreversible damage in the SJ-MOSFET devices. However, the short-circuit robustness of SJ-MOSFET is still unstable, and the structure needs to be further improved. In our study, the electrical performance of a 650V SJ-MOSFET with offset P-pillar is theoretically investigated by means of technology computer aided design (TCAD) when the SJ-MOSFET is short circuited. The results clearly show that the optimized SJ-MOSFET can withstand the source-drain voltage of 400V for at least 10 μs in the case of the short-circuit. The thermal distribution and peak temperature of the cell structure of SJ-MOSFET are also simulated to assist in the analysis of the short circuit capable of the device. In addition, the hole current density distribution of two SJ-MOSFETs is considered to gain insight into the effect of P-pillar parameters on the short-circuit robustness. The result represents that the structure with offset P-pillar can effectively improve the short-circuit capability. Subject Super-junction structureShort circuitP-pillar offsetTCAD simulation To reference this document use: http://resolver.tudelft.nl/uuid:005b3281-eb9d-44ce-9e66-ad37e4931dd6 DOI https://doi.org/10.1109/ICEPT56209.2022.9873366 Publisher IEEE Embargo date 2023-07-01 ISBN 978-1-6654-9906-4 Source Proceedings of the 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) Event 2022 23rd International Conference on Electronic Packaging Technology (ICEPT), 2022-08-10 → 2022-08-13, Dalian, China Bibliographical note Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type conference paper Rights © 2022 Wucheng Yuan, Ke Liu, S. Wang, C. Tan, H. Ye Files PDF A_TCAD_Simulation_Study_o ... MOSFET.pdf 2.82 MB Close viewer /islandora/object/uuid:005b3281-eb9d-44ce-9e66-ad37e4931dd6/datastream/OBJ/view