Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm

Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm

Dutta, S. (TU Delft Dynamics of Micro and Nano Systems)
Hueting, Raymond J.E. (University of Twente)
Verbiest, G.J. (TU Delft Dynamics of Micro and Nano Systems)

2022

We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with a record low bandwidth of 38 nm. The AMLET, designed in a CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within a 0.21 ∼\μ m thick SOI layer, which forms a Fabry-Pérot (FP) resonator perpendicular to the Si surface. Light is emitted from the reverse biased emitter-base junction via phonon-assisted hot carrier recombination and, additionally, minority carriers are injected via the forward-biased Base-Collector junction. The combination of injection from collector terminal through a narrow base and FP optical resonance, yields a high optical power efficiency of 4.3\× 10-6 at V BC=0.8 V and V EB=10 V. Our work opens new possibilities in spectral-engineering of Si light-emitters, which could boost performance of all-Si optical interconnects and sensors.

Avalanche breakdown
electroluminescence
Fabry-Pérot resonance
integrated optics
silicon

http://resolver.tudelft.nl/uuid:0183b976-1d5d-447c-b90c-ba7dc806c214

https://doi.org/10.1109/LED.2022.3200349

2023-07-01

0741-3106

IEEE Electron Device Letters, 43 (10), 1701-1704

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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© 2022 S. Dutta, Raymond J.E. Hueting, G.J. Verbiest