Radio-Frequency C - V Measurements with Subattofarad Sensitivity

Radio-Frequency C - V Measurements with Subattofarad Sensitivity

Malinowski, F.K. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Han, L. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
de Jong, D. (TU Delft BUS/Quantum Delft; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Wang, Ji Yin (Kavli institute of nanoscience Delft; Student TU Delft)
Prosko, C.G. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre)
Krogstrup, Peter (University of Copenhagen)
Bakkers, Erik P.A.M. (Eindhoven University of Technology)
Kouwenhoven, Leo P. (TU Delft QN/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Koski, Jonne V. (Microsoft Quantum Lab Delft)

2022

We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nanoscale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find the measurement sensitivity values reaching down to 75zF/Hz at 1 kHz measurement bandwidth, and noise down to 0.45 aF at 1 Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular, we predict a typical sensitivity of about 40zF/Hz at room temperature with a resonator composed of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80-nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in situ.

http://resolver.tudelft.nl/uuid:0ed74d6c-6c05-4c3f-95c5-5c08b20e3fb9

https://doi.org/10.1103/PhysRevApplied.18.024032

2331-7019

Physical Review Applied, 18 (2)

Institutional Repository

journal article

© 2022 F.K. Malinowski, L. Han, D. de Jong, Ji Yin Wang, C.G. Prosko, Peter Krogstrup, Erik P.A.M. Bakkers, Leo P. Kouwenhoven, Jonne V. Koski, More Authors