Print Email Facebook Twitter Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect Title Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect Author Nakayama, H. Althammer, M. Chen, Y.T. Uchida, K. Kajiwara, Y. Kikuchi, D. Ohtani, T. Geprägs, S. Opel, M. Takahashi, S. Gross, R. Bauer, G.E.W. Goennenwein, S.T.B. Saitoh, E. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2013-05-13 Abstract We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it “spin Hall magnetoresistance.” To reference this document use: http://resolver.tudelft.nl/uuid:18628742-c7bd-43ea-adb3-1fa0eb8fa8cd Publisher American Physical Society ISSN 0031-9007 Source http://link.aps.org/doi/10.1103/PhysRevLett.110.206601 Source Physical Review Letters, 110 (20), 2013 Part of collection Institutional Repository Document type journal article Rights © 2013 American Physical Society Files PDF Bauer_2013.pdf 2.24 MB Close viewer /islandora/object/uuid:18628742-c7bd-43ea-adb3-1fa0eb8fa8cd/datastream/OBJ/view