A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

Pan, S. (TU Delft Electronic Instrumentation)
Luo, Yanquan (External organisation)
Heidary Shalmany, S. (TU Delft Electronic Instrumentation)
Makinwa, K.A.A. (TU Delft Microelectronics)

Fujino, Laura C. (editor)

Microelectronics

2017-02-01

Temperature sensors are often used for the temperature compensation of frequency references [1-5]. High resolution and energy efficiency are then critical requirements, the former to minimize jitter and the latter to minimize power dissipation in a given conversion time. A MEMS-resonator-based sensor meets both criteria [1], but requires two resonators. In principle, resistor-based sensors also meet these criteria, and are CMOS compatible, but previous designs have been limited by the power dissipation [2-4] or 1/f noise [6] of their readout electronics. This paper describes a CMOS temperature sensor that digitizes the temperature-dependent phase shift of an RC filter. It achieves 410μKrms resolution in a 5ms conversion time, while consuming only 160μW. This corresponds to a resolution FOM of 0.13pJ·K2, a 5× improvement on previous CMOS sensors [6].

Temperature sensors
Bridge circuits
Resistors
1/f noise
Energy resolution
Sensor systems

http://resolver.tudelft.nl/uuid:301d5e4c-c103-44ec-9b58-5a5b25024173

https://doi.org/10.1109/ISSCC.2017.7870309

IEEE, Danvers, MA

978-1-5090-3757-5

2017 IEEE International Solid-State Circuits Conference, ISSCC 2017: Digest of Technical Papers

ISSCC 2017, 2017-02-05 → 2017-02-09, San Francisco, CA, United States

Session 9, Sensors 9.1

Institutional Repository

conference paper

© 2017 S. Pan, Yanquan Luo, S. Heidary Shalmany, K.A.A. Makinwa