Print Email Facebook Twitter The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors Title The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors Author Sokolovskij, R. (TU Delft Electronic Components, Technology and Materials) Zhang, Jian (Fudan University) Zheng, Hongze Li, Wenmao Jiang, Y. (TU Delft BT/Bioprocess Engineering) Yang, Gaiying Yu, H. (TU Delft Applied Sciences) Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Faculty Applied Sciences Date 2020 Abstract The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high temperature. With increasing recess depth, the threshold voltage (VTH) shifted from -1.57 to 1.49 V. A shallow recess (5 nm) resulted in a 1.03 mA increase in signal variation (AIDS), while a deep recess (15 nm) resulted in the highest sensing response (S) of 145.8% towards 300 ppm H 2 as compared to reference sensors without gate recess. Transient measurements demonstrated reversible H 2 response for all tested devices. The response and recovery time towards 250 ppm gradually decreased from 7.3 to 2.5 min and from 29.2 to 8.85 min going from 0 nm to 15 nm recess depth. The power consumption of the sensors reduced with increasing recess depth from 146.6 to 2.95 mW. To reference this document use: http://resolver.tudelft.nl/uuid:34ee1c5b-8f44-490a-b6a7-d81d72e18cf6 Embargo date 2021-09-15 Source IEEE Sensors, 20 (16), 8947-8955 Bibliographical note Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type journal article Rights © 2020 R. Sokolovskij, Jian Zhang, Hongze Zheng, Wenmao Li, Y. Jiang, Gaiying Yang, H. Yu, Pasqualina M Sarro, Kouchi Zhang Files PDF The_Impact_of_Gate_Recess ... sors_1.pdf 8.43 MB Close viewer /islandora/object/uuid:34ee1c5b-8f44-490a-b6a7-d81d72e18cf6/datastream/OBJ/view