Print Email Facebook Twitter Radio-Frequency Reflectometry in Silicon-Based Quantum Dots Title Radio-Frequency Reflectometry in Silicon-Based Quantum Dots Author Liu, Y. Y. (Harvard University) Philips, S.G.J. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Orona, L. A. (Harvard University) Samkharadze, Nodar (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre) McJunkin, T. (University of Wisconsin-Madison) Macquarrie, E. R. (University of Wisconsin-Madison) Eriksson, M. A. (University of Wisconsin-Madison) Vandersypen, L.M.K. (TU Delft QuTech Advanced Research Centre; TU Delft QN/Vandersypen Lab; Kavli institute of nanoscience Delft) Yacoby, A. (Harvard University) Date 2021 Abstract Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in Si/SixGe1-x quantum dots, achieving a fidelity of 99.9% for a measurement time of 1μs. To reference this document use: http://resolver.tudelft.nl/uuid:49ed01af-c422-401b-9408-b1ba85a27210 DOI https://doi.org/10.1103/PhysRevApplied.16.014057 ISSN 2331-7019 Source Physical Review Applied, 16 (1) Part of collection Institutional Repository Document type journal article Rights © 2021 Y. Y. Liu, S.G.J. Philips, L. A. Orona, Nodar Samkharadze, T. McJunkin, E. R. Macquarrie, M. A. Eriksson, L.M.K. Vandersypen, A. Yacoby Files PDF PhysRevApplied.16.014057_1_.pdf 1.57 MB Close viewer /islandora/object/uuid:49ed01af-c422-401b-9408-b1ba85a27210/datastream/OBJ/view