From Si Towards SiC Technology for Harsh Environment Sensing

Book chapter (2020)

Authors

L.M. Middelburg Electronic Components, Technology and Materials -

W.D. van Driel Electronic Components, Technology and Materials -

Kouchi Zhang Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1007/978-3-030-16577-2_1

SiC Harsh environments Sensor integration More than Moore WBG

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http://resolver.tudelft.nl/uuid:57dbcb17-b25e-4417-a86f-d9fc43b48aa7

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Published Date

2020

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

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