Print Email Facebook Twitter Generation and transport of photoexcited electrons in single-crystal diamond Title Generation and transport of photoexcited electrons in single-crystal diamond Author Heremans, F.J. Fuchs, G.D. Wang, C.F. Hanson, R. Awschalom, D.D. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2009-04-15 Abstract We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ? 3?hours. By measuring the photoexcited Hall effect, we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at ? 1.9?eV. These findings shed light on sub-bandgap states in nitrogen-doped single-crystal diamond. Subject diamondelemental semiconductorsenergy gapHall effectnitrogenphotoconductivity To reference this document use: http://resolver.tudelft.nl/uuid:5b476c87-e65c-4576-90f8-f9d8594476d9 DOI https://doi.org/10.1063/1.3120225 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v94/i15/p152102/s1 Source Applied Physics Letters, 94 (15), 2009 Part of collection Institutional Repository Document type journal article Rights (c) 2009 The Author(s); American Institute of Physics Files PDF Hanson_2009.pdf 325.73 KB Close viewer /islandora/object/uuid:5b476c87-e65c-4576-90f8-f9d8594476d9/datastream/OBJ/view