Print Email Facebook Twitter Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition Title Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition Author Mohammadi, V. De Boer, W.B. Scholtes, T.L.M. Nanver, L.K. Faculty Electrical Engineering, Mathematics and Computer Science Department Delft Institute of Microsystems and Nanoelectronics Date 2012-07-17 Abstract The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yield lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates. A very low standard deviation, less than 0.02, is achieved while at the same time making it independent of oxide coverage ratios and window sizes. To reference this document use: http://resolver.tudelft.nl/uuid:656d89f4-1db2-4b73-a5a8-6fde3ac7d2a1 DOI https://doi.org/10.1149/2.024201jss Publisher The Electrochemical Society ISSN 2162-8769 Source ECS Journal of Solid State Science and Technology, 1 (1), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 The Electrochemical Society Files PDF Mohammadi_2012.pdf 1.03 MB Close viewer /islandora/object/uuid:656d89f4-1db2-4b73-a5a8-6fde3ac7d2a1/datastream/OBJ/view