Print Email Facebook Twitter Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations Title Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations Author Lodari, M. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Lampert, L. (Intel Labs) Zietz, O. (Intel Labs) Pillarisetty, R. (Intel Labs) Clarke, J. S. (Intel Labs) Scappucci, G. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Date 2022 Abstract We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined in silicon metal oxide semiconductor Hall-bar transistors. These silicon metal oxide semiconductor Hall bars are made by advanced semiconductor manufacturing on 300 mm silicon wafers and support a two-dimensional electron gas of high quality with a maximum mobility of 17.6×103 cm2/Vs and minimum percolation density of 3.45×1010 cm-2. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy splitting of the two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T=1.7 K, we estimate a maximum valley splitting of ?EVS=8.2 meV at a density of 6.8×1012 cm-2. Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor-oxide interface. To reference this document use: http://resolver.tudelft.nl/uuid:6970b176-2906-436b-8596-acac260216d6 DOI https://doi.org/10.1103/PhysRevLett.128.176603 ISSN 0031-9007 Source Physical Review Letters, 128 (17) Part of collection Institutional Repository Document type journal article Rights © 2022 M. Lodari, L. Lampert, O. Zietz, R. Pillarisetty, J. S. Clarke, G. Scappucci Files PDF PhysRevLett.128.176603.pdf 558.14 KB Close viewer /islandora/object/uuid:6970b176-2906-436b-8596-acac260216d6/datastream/OBJ/view