Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Beukman, A.J.A. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
de Vries, F.K. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
van Veen, J. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
Skolasinski, R.J. (TU Delft QRD/Wimmer Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
Wimmer, M.T. (TU Delft QRD/Wimmer Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
Qu, F. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
De Vries, David T. (Student TU Delft; Kavli institute of nanoscience Delft)
Nguyen, Binh Minh (HRL Laboratories)
Kouwenhoven, Leo P. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech; Microsoft Quantum Lab Delft; Kavli institute of nanoscience Delft)

QuTech

2017

The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

http://resolver.tudelft.nl/uuid:7717b72a-75cf-4692-829b-5ad7598f8e42

https://doi.org/10.1103/PhysRevB.96.241401

2469-9950

Physical Review B, 96 (24)

Institutional Repository

journal article

© 2017 A.J.A. Beukman, F.K. de Vries, J. van Veen, R.J. Skolasinski, M.T. Wimmer, F. Qu, David T. De Vries, Binh Minh Nguyen, Leo P. Kouwenhoven