Origin of charged gap states in a-Si:H and their evolution during light soaking

Title

Origin of charged gap states in a-Si:H and their evolution during light soaking

Author

Nádazdy, V.
Zeman, M.

Faculty

Electrical Engineering, Mathematics and Computer Science

Date

2004

To reference this document use:

http://resolver.tudelft.nl/uuid:805cfd8a-f625-4d90-9741-619ab0434e55

Publisher

American Physical Society

ISSN

1550-235X

Source

Physical Review B - Condensed Matter and Materials Physics, 69

Part of collection

Institutional Repository

Document type

journal article

Rights

(c) 2004 Nádazdy, V.; Zeman, M.