Print Email Facebook Twitter Scaling behavior and parasitic series resistance in disordered organic field-effect transistors Title Scaling behavior and parasitic series resistance in disordered organic field-effect transistors Author Meijer, E.J. Gelinck, G.H. Van Veenendaal, E. Huisman, B.H. De Leeuw, D.M. Klapwijk, T.M. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2003-06-23 Abstract The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the M? range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility. Subject organic semiconductorsthin film transistors,semiconductor device measurementfield effect transistorscarrier mobilityamorphous semiconductors To reference this document use: http://resolver.tudelft.nl/uuid:cbf16ff2-1a3d-4dbb-be14-5a748f7b5f60 DOI https://doi.org/10.1063/1.1581389 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v82/i25/p4576/s1 Source Applied Physics Letters, 82 (25), 2003 Part of collection Institutional Repository Document type journal article Rights (c) 2003 The Author(s); American Institute of Physics Files PDF Klapwijk_2003.pdf 77.11 KB Close viewer /islandora/object/uuid:cbf16ff2-1a3d-4dbb-be14-5a748f7b5f60/datastream/OBJ/view