Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

Patra, B (TU Delft OLD QCD/Charbon Lab)
Mehrpoo, M. (TU Delft OLD QCD/Charbon Lab; Broadcom Netherlands B.V.)
Ruffino, A. (TU Delft (OLD)Applied Quantum Architectures; Swiss Federal Institute of Technology)
Sebastiano, F. (TU Delft (OLD)Applied Quantum Architectures)
Charbon-Iwasaki-Charbon, E. (Swiss Federal Institute of Technology)
Babaie, M. (TU Delft Electronics)

2020

This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.

Cryo-CMOS
Quantum computing
Cryogenic
Capacitor
Inductors
Transformer
Resonators
Quality factor

http://resolver.tudelft.nl/uuid:dc2d4e16-f294-4de4-aa65-45841c871d01

https://doi.org/10.1109/JEDS.2020.2986722

IEEE Journal of the Electron Devices Society, 8 (1), 448-456

Institutional Repository

journal article

© 2020 B Patra, M. Mehrpoo, A. Ruffino, F. Sebastiano, E. Charbon-Iwasaki-Charbon, M. Babaie