Print Email Facebook Twitter Fully Overheated Single-Electron Transistor Title Fully Overheated Single-Electron Transistor Author Laakso, M.A. Heikkilä, T.T. Nazarov, Y.V. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2010-05-12 Abstract We consider the fully overheated single-electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single-electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise. To reference this document use: http://resolver.tudelft.nl/uuid:f05b5f18-d690-4e28-abc8-e5555772571d DOI https://doi.org/10.1103/PhysRevLett.104.196805 Publisher American Physical Society ISSN 1079-7114 Source Physical Review Letters, 104 (19), 2010 Part of collection Institutional Repository Document type journal article Rights (c) 2010 The Author(s); American Physical Society Files PDF Nazarov_2010.pdf 358.1 KB Close viewer /islandora/object/uuid:f05b5f18-d690-4e28-abc8-e5555772571d/datastream/OBJ/view