Print Email Facebook Twitter Single photon emission and detection at the nanoscale utilizing semiconductor nanowires Title Single photon emission and detection at the nanoscale utilizing semiconductor nanowires Author Reimer, M.E. van Kouwen, M.P. Barkelid, M. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2011-03-31 Abstract We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single-Si-nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale Subject nanowiressingle photon detectionquantum dotselectroluminescencephotoluminescenceSi avalanche photodiode To reference this document use: http://resolver.tudelft.nl/uuid:269e4b7f-0744-4228-bcca-897963ee3511 Publisher SPIE ISSN 1934-2608 Source https://doi.org/10.1117/1.3562279 Source Journal of nanophotonics, 5 Part of collection Institutional Repository Document type journal article Rights (c)2011 Reimer, M.E., van Kouwen, M.P., Barkelid, M. Files PDF Reimer.pdf 632.79 KB Close viewer /islandora/object/uuid:269e4b7f-0744-4228-bcca-897963ee3511/datastream/OBJ/view