Print Email Facebook Twitter Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy Title Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy Author Matsuki, N. Ishihara, R. Baiano, A. Beenakker, C.I.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics & Computer Engineering Date 2008-08-11 Abstract We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of the {122}?9 CSL boundary is much smaller than that of a random boundary, and the {111}?3 CSL boundary is negligible. This is consistent with previous theoretical predictions and experimental results for thin-film transistors. Subject crystal growth from meltelemental semiconductorsgrain boundariesisland structuresilicon To reference this document use: http://resolver.tudelft.nl/uuid:32b8c170-ed0f-4a8c-9626-d55dbadb30f1 DOI https://doi.org/10.1063/1.2968663 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v93/i6/p062102/s1 Source Applied Physics Letters, 93 (6), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 The Author(s); American Institute of Physics Files PDF Beenakker 2008.pdf 279.01 KB Close viewer /islandora/object/uuid:32b8c170-ed0f-4a8c-9626-d55dbadb30f1/datastream/OBJ/view