Monte Carlo simulation of the secondary electron yield of silicon rich silicon nitride

Monte Carlo simulation of the secondary electron yield of silicon rich silicon nitride

Theulings, A.M.M.G. (TU Delft RST/Neutron and Positron Methods in Materials; Nikhef)
Tao, S. X. (Eindhoven University of Technology)
Hagen, C.W. (TU Delft ImPhys/Microscopy Instrumentation & Techniques)
van der Graaf, H. (TU Delft RST/Neutron and Positron Methods in Materials; Nikhef)

2022

The effect of doping in Si3N4 membranes on the secondary electron yield is investigated using Monte Carlo simulations of the electron-matter interactions. The effect of the concentration and the distribution of the doping in silicon rich silicon nitride membranes is studied by using the energy loss function as obtained from ab initio density functional theory calculations in the electron scattering models of the Monte Carlo simulations. An increasing doping concentration leads to a decreasing maximum secondary electron yield. The distribution of the doped silicon atoms can be optimised in order to minimize the decrease in yield.

Charge transport and multiplication in solid media
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
Electron multipliers (vacuum)
Vacuum-based detectors

http://resolver.tudelft.nl/uuid:44edd432-a06c-4859-ac58-35c2580d43e8

https://doi.org/10.1088/1748-0221/17/03/P03008

2022-09-09

1748-0221

Journal of Instrumentation, 17 (3)

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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journal article

© 2022 A.M.M.G. Theulings, S. X. Tao, C.W. Hagen, H. van der Graaf