Print Email Facebook Twitter Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry Title Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry Author Nguyen, Binh Minh (HRL Laboratories) Kiselev, Andrey A. (HRL Laboratories) Noah, Ramsey (HRL Laboratories) Yi, Wei (HRL Laboratories) Qu, F. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Beukman, A.J.A. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) de Vries, F.K. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) van Veen, J. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Nadj-Perge, S. (TU Delft QN/Quantum Transport; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Kouwenhoven, Leo P. (TU Delft QRD/Kouwenhoven Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Kjaergaard, Morten (University of Copenhagen) Suominen, Henri J. (University of Copenhagen) Nichele, Fabrizio (University of Copenhagen) Marcus, Charles M. (University of Copenhagen) Manfra, Michael J. (Purdue University) Sokolich, Marko (HRL Laboratories) Date 2016-08-12 Abstract A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type. To reference this document use: http://resolver.tudelft.nl/uuid:4cdcba6e-a5a3-42ae-b0c5-ef19bd0f35e5 DOI https://doi.org/10.1103/PhysRevLett.117.077701 ISSN 0031-9007 Source Physical Review Letters, 117 (7) Part of collection Institutional Repository Document type journal article Rights © 2016 Binh Minh Nguyen, Andrey A. Kiselev, Ramsey Noah, Wei Yi, F. Qu, A.J.A. Beukman, F.K. de Vries, J. van Veen, S. Nadj-Perge, Leo P. Kouwenhoven, Morten Kjaergaard, Henri J. Suominen, Fabrizio Nichele, Charles M. Marcus, Michael J. Manfra, Marko Sokolich Files PDF PhysRevLett.117.077701.pdf 1.67 MB Close viewer /islandora/object/uuid:4cdcba6e-a5a3-42ae-b0c5-ef19bd0f35e5/datastream/OBJ/view