MS
Marko Sokolich
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1
Journal article
(2016)
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Binh Minh Nguyen, Andrey A. Kiselev, Morten Kjaergaard, Henri J. Suominen, Fabrizio Nichele, Charles M. Marcus, Michael J. Manfra, Marko Sokolich, Ramsey Noah, Wei Yi, Fanming Qu, Arjan J.A. Beukman, Folkert K. De Vries, Jasper Van Veen, Stevan Nadj-Perge, Leo P. Kouwenhoven
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
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A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.