Print Email Facebook Twitter Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit Title Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit Author Zhang, L.X. Leburton, J.P. Hanson, R. Kouwenhoven, L.P. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2004-09-27 Abstract We show that the design of a quantum point contact adjacent to a quantum dot can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot. Our analysis is based on the self-consistent solution of coupled three-dimensional Kohn-Sham and Poisson equations for the quantum circuit. We predict a detection sensitivity increase by at least 73% over the conventional design. Subject aluminium compoundsgallium arsenideIII-V semiconductorsquantum point contactssemiconductor quantum dotssingle electron devicessemiconductor device modelsPoisson equation To reference this document use: http://resolver.tudelft.nl/uuid:59d19c17-bf51-4656-b31c-3c19ce92adee DOI https://doi.org/10.1063/1.1790605 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v85/i13/p2628/s1 Source Applied Physics Letters, 85 (13), 2004 Part of collection Institutional Repository Document type journal article Rights (c) 2004 The Author(s); American Institute of Physics Files PDF Hanson_2004.pdf 273.34 KB Close viewer /islandora/object/uuid:59d19c17-bf51-4656-b31c-3c19ce92adee/datastream/OBJ/view