Print Email Facebook Twitter Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes Title Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes Author Herzog, Alexander (Technische Universität Darmstadt) Benkner, Simon (Technische Universität Darmstadt) Zandi, Babak (Technische Universität Darmstadt) Buffolo, Matteo (Università degli Studi di Padova) van Driel, W.D. (TU Delft Electronic Components, Technology and Materials; Signify) Meneghini, Matteo (Università degli Studi di Padova) Khanh, Tran Quoc (Technische Universität Darmstadt) Date 2023 Abstract We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of 365nm. The stress tests were carried out for a period of 8665 hours with forward currents between 350mA and 700mA and junction temperatures up to 132°C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 °C indicate a decrease in radiant flux between 10-40% varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model's lifetime predictions. Subject Light-emitting diode (LED)degradationUV-Alifetime predictionreliabilitylens crackingsilicone lensultraviolet To reference this document use: http://resolver.tudelft.nl/uuid:5c47ecea-fcfe-4d0d-928e-5758a9eb2014 DOI https://doi.org/10.1109/ACCESS.2023.3249478 ISSN 2169-3536 Source IEEE Access, 11, 19928-19940 Part of collection Institutional Repository Document type journal article Rights © 2023 Alexander Herzog, Simon Benkner, Babak Zandi, Matteo Buffolo, W.D. van Driel, Matteo Meneghini, Tran Quoc Khanh Files PDF Lifetime_Prediction_of_Cu ... Diodes.pdf 4.48 MB Close viewer /islandora/object/uuid:5c47ecea-fcfe-4d0d-928e-5758a9eb2014/datastream/OBJ/view