Print Email Facebook Twitter Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation Title Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation Author Shastin, V.N. Zhukavin, R.K. Orlova, E.E. Pavlov, S.G. Rümmeli, M.H. Hübers, H.W. Hovenier, J.N. Klaassen, T.O. Riemann, H. Bradley, I.V. Van der Meer, A.F.G. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2002-05-13 Abstract Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude below the value for photoionization pumping. The influence of nonequilibrium intervalley TO phonons on the population of excited Bi impurity states is discussed. Subject siliconelemental semiconductorsstimulated emissionimpurity statesphosphorusbismuthoptical pumping To reference this document use: http://resolver.tudelft.nl/uuid:716530bd-73f7-4fc4-af50-e0a877c3b0f6 DOI https://doi.org/10.1063/1.1476955 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v80/i19/p3512/s1 Source Applied Physics Letters, 80 (19), 2002 Part of collection Institutional Repository Document type journal article Rights (c) 2002 The Author(s); American Institute of Physics Files PDF Hovenier_2002.pdf 53.81 KB Close viewer /islandora/object/uuid:716530bd-73f7-4fc4-af50-e0a877c3b0f6/datastream/OBJ/view