Print Email Facebook Twitter InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices Title InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices Author Buizert, C. Koppens, F.H.L. Pioro-Ladriere, M. Tranitz, H.P. Vink, I.T. Tarucha, S. Wegscheider, W. Vandersypen, L.M.K. Faculty Applied Sciences Department Kavli Institute of Nanoscience Delft Date 2008-11-26 Abstract We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs=AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of ‘‘bias cooling.’’ Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise. To reference this document use: http://resolver.tudelft.nl/uuid:74ba9102-0e20-4f3a-b0fc-976e66a0f53a Publisher American Physical Society ISSN 1079-7114 Source Physical Review Letters, 101 (22), 2008 Part of collection Institutional Repository Document type journal article Rights (c) 2008 Buizert, C.; American Physical Society Files PDF Buizert_2008.pdf 665.55 KB Close viewer /islandora/object/uuid:74ba9102-0e20-4f3a-b0fc-976e66a0f53a/datastream/OBJ/view