Print Email Facebook Twitter Towards Tm2+ in sialon thin films grown by sputtering using the gradient deposition Title Towards Tm2+ in sialon thin films grown by sputtering using the gradient deposition Author Bizinoto Ferreira Bosco, G. (TU Delft RST/Luminescence Materials) van der Kolk, E. (TU Delft RST/Luminescence Materials) Contributor Mascher, P. (editor) Rosei, F. (editor) Lockwood, D. J. (editor) Date 2020 Abstract The valence stability parameter (EFf), defined as the difference between the charge transfer energy to the host intrinsic Fermi energy, was used as criterion to analyze the capability of different host materials within the SiAlON class to stabilize divalent thulium. Available data on charge transfer energies and optical bandgap values are reviewed for Si3N4, SiO2, AlN, and Al2O3. In addition, new data on thin films, collected by our gradient sputter deposition and characterization method on silicon and aluminum nitrides (Si0.75xAl1-xN), are reported. These data are sufficient to show that, at least in the nitride subsection of the SiAlON class, divalent thulium is not expected to be stable due to the presence of high EFf values. The use of sub-stoichiometric silicon nitride and oxide is also briefly considered. To reference this document use: http://resolver.tudelft.nl/uuid:89d351d6-b892-448f-a9bb-a1a46dd2dffb DOI https://doi.org/10.1149/09702.0017ecst Publisher IOP Publishing ISBN 9781607688907 Source 237th ECS Meeting: Nanoscale Luminescent Materials 6, 97 (2) Event 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020, 2020-05-10 → 2020-05-14, Montreal, Canada Bibliographical note Accepted Author Manuscript Part of collection Institutional Repository Document type conference paper Rights © 2020 G. Bizinoto Ferreira Bosco, E. van der Kolk Files PDF Paper_132722_manuscript_30406_0.pdf 766.19 KB Close viewer /islandora/object/uuid:89d351d6-b892-448f-a9bb-a1a46dd2dffb/datastream/OBJ/view