Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics

Prabowo, B.; Dijkema, J.J.; Xue, X.; Sebastiano, F.; Vandersypen, L.M.K.; Babaie, M.

doi:10.1109/TQE.2024.3385673

Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics

Title

Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics

Author

Prabowo, B. (TU Delft QCD/Babaie Lab; TU Delft QuTech Advanced Research Centre)
Dijkema, J.J. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Xue, X. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft)
Sebastiano, F. (TU Delft Quantum Circuit Architectures and Technology; TU Delft QuTech Advanced Research Centre)
Vandersypen, L.M.K. (TU Delft QuTech Advanced Research Centre; TU Delft QN/Vandersypen Lab; Kavli institute of nanoscience Delft)
Babaie, M. (TU Delft Electronics; TU Delft QuTech Advanced Research Centre)

Date

2024

Abstract

In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. This article introduces a theoretical framework to evaluate the effect of various parameters, such as the readout probe power, readout chain's noise performance, and integration time on the intrinsic readout signal-to-noise ratio, and thus readout fidelity of RF gate-based readout systems. By analyzing the underlying physics of spin qubits during readout, this work proposes a qubit readout model that takes into account the qubit's quantum mechanical properties, providing a way to evaluate the tradeoffs among the aforementioned parameters. The validity of the proposed model is evaluated by comparing the simulation and experimental results. The proposed analytical approach, the developed model, and the experimental results enable designers to optimize the entire readout chain effectively, thus leading to a faster, lower power readout system with integrated cryogenic electronics.

Subject

Bit error rate
Cryo-CMOS
Cryogenic
Double Quantum Dot
Electronics
Electrons
Energy states
Logic gates
Noise temperature
Quantum capacitance
Radio frequency
Readout fidelity
Readout SNR
RF gate-based readout
Signal to noise ratio
Spin Qubits