Print Email Facebook Twitter Effects of (i)a-Si Title Effects of (i)a-Si: H deposition temperature on high-efficiency silicon heterojunction solar cells Author Zhao, Y. (TU Delft Photovoltaic Materials and Devices) Procel Moya, P.A. (TU Delft Photovoltaic Materials and Devices; University San Francisco de Quito) Smets, A.H.M. (TU Delft Photovoltaic Materials and Devices) Mazzarella, L. (TU Delft Photovoltaic Materials and Devices) Han, C. (TU Delft Photovoltaic Materials and Devices) Yang, G. (TU Delft Photovoltaic Materials and Devices) Cao, L. (TU Delft Photovoltaic Materials and Devices) Yao, Z. (TU Delft Photovoltaic Materials and Devices) Weeber, A.W. (TU Delft Photovoltaic Materials and Devices; TNO) Zeman, M. (TU Delft Electrical Sustainable Energy) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Department Electrical Sustainable Energy Date 2022 Abstract Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a-Si:H deposition temperature on passivation quality and SHJ solar cell performance. At the lower end of temperatures ranging from 140°C to 200°C, it was observed with Fourier-transform infrared spectroscopy (FTIR) that (i)a-Si:H films are less dense, thus hindering their surface passivation capabilities. However, with additional hydrogen plasma treatments (HPTs), those (i)a-Si:H layers deposited at lower temperatures exhibited significant improvements and better passivation qualities than their counterparts deposited at higher temperatures. On the other hand, even though we observed the highest VOCs for cells with (i)a-Si:H deposited at the lowest temperature (140°C), the related FFs are poorer as compared to their higher temperature counterparts. The optimum trade-off between VOC and FF for the SHJ cells was found with temperatures ranging from 160°C to 180°C, which delivered independently certified efficiencies of 23.71%. With a further improved p-layer that enables a FF of 83.3%, an efficiency of 24.18% was achieved. Thus, our study reveals two critical requirements for optimizing the (i)a-Si:H layers in high-efficiency SHJ solar cells: (i) excellent surface passivation quality to reduce losses induced by interface recombination and simultaneously (ii) less-defective (i)a-Si:H bulk to not disrupt the charge carrier collections. Subject FTIRintrinsic amorphous siliconpassivationsilicon heterojunction solar cells To reference this document use: http://resolver.tudelft.nl/uuid:af39307a-147e-4240-b106-5c4a1fe21f53 DOI https://doi.org/10.1002/pip.3620 ISSN 1062-7995 Source Progress in Photovoltaics: research and applications, 31 (2023) (12), 1170-1180 Part of collection Institutional Repository Document type journal article Rights © 2022 Y. Zhao, P.A. Procel Moya, A.H.M. Smets, L. Mazzarella, C. Han, G. Yang, L. Cao, Z. Yao, A.W. Weeber, M. Zeman, O. Isabella Files PDF Progress_in_Photovoltaics ... ilicon.pdf 1.56 MB Close viewer /islandora/object/uuid:af39307a-147e-4240-b106-5c4a1fe21f53/datastream/OBJ/view