Print Email Facebook Twitter Characterization of the defect density states in MoOx for c-Si solar cell applications Title Characterization of the defect density states in MoOx for c-Si solar cell applications Author Scire, D. (Università degli Studi di Palermo) Macaluso, Robert (Università degli Studi di Palermo) Mosca, Mauro (Università degli Studi di Palermo) Mirabella, S. (University of Catania) Gulino, Antonino (University of Catania) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Crupi, I. (Università degli Studi di Palermo) Department Electrical Sustainable Energy Date 2021 Abstract Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness. Subject c-Si solar cellDensity of statesMolybdenum oxidePhotovoltaicSmall polaronTransition metal oxide To reference this document use: http://resolver.tudelft.nl/uuid:b3675013-08af-4673-9a0a-eaa8d2eeec5a DOI https://doi.org/10.1016/j.sse.2021.108135 Embargo date 2023-06-20 ISSN 0038-1101 Source Solid-State Electronics, 185, 1-5 Bibliographical note Accepted author manuscript Part of collection Institutional Repository Document type journal article Rights © 2021 D. Scire, Robert Macaluso, Mauro Mosca, S. Mirabella, Antonino Gulino, O. Isabella, M. Zeman, I. Crupi Files PDF SSE_Daniele_manuscript_re ... ersion.pdf 1000.6 KB Close viewer /islandora/object/uuid:b3675013-08af-4673-9a0a-eaa8d2eeec5a/datastream/OBJ/view