Print Email Facebook Twitter The Electronic Structure of Lanthanide Impurities in TiO2, ZnO, SnO2, and Related Compounds Title The Electronic Structure of Lanthanide Impurities in TiO2, ZnO, SnO2, and Related Compounds Author Dorenbos, P. Faculty Applied Sciences Department RST/Radiation, Science and Technology Date 2013-12-20 Abstract The vacuum referred binding energy of electrons in the 4fn levels for all divalent and trivalent lanthanide impurity states in TiO2, ZnO, SnO2, and related compounds MTiO3 and MSnO3 (M = Ca2 +, Sr2 +, Ba2 +) and Ca2SnO4 are presented. They are obtained by collecting data from the literature on the spectroscopy of lanthanide ions, and by combining that data with the chemical shift model. The model provides the energy at the top of the valence band and at the bottom of the conduction band, and it will be shown that those energies are in excellent agreement with what is known from techniques like photo-electron spectroscopy and electrochemical studies. Electronic level diagrams are presented that explain and predict aspects like absence or presence of lanthanide 4f-4f or 5d-4f emissions and the preferred lanthanide valence. To reference this document use: http://resolver.tudelft.nl/uuid:bceb93eb-8bde-4916-92e1-237513c6a2eb DOI https://doi.org/10.1149/2.005403jss Publisher The Electrochemical Society ISSN 2162-8769 Source ECS Journal of Solid State Science and Technology, 3 (3), 2014 Part of collection Institutional Repository Document type journal article Rights © 2013 The Electrochemical Society Files PDF Dorenbos_2013.pdf 369.84 KB Close viewer /islandora/object/uuid:bceb93eb-8bde-4916-92e1-237513c6a2eb/datastream/OBJ/view