High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences)
Kang, Xuanwu (Chinese Academy of Sciences)
Deng, Shixiong (National University of Defense Technology; Hebei Semiconductor Research Institute)
Zheng, Yingkui (Chinese Academy of Sciences)
Wei, Ke (Chinese Academy of Sciences)
Xu, Linwang (Hebei Semiconductor Research Institute)
Wu, Hao (Chinese Academy of Sciences)
Liu, Xinyu (Chinese Academy of Sciences)

2021

We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.

GaN
Microwave power detector
Quasi
Schottky barrier diode (SBD)
Vertical

http://resolver.tudelft.nl/uuid:d4d48a96-d622-4f59-b505-9c9ea5a9c7a7

https://doi.org/10.1088/1361-6641/abd835

0268-1242

Semiconductor Science and Technology, 36 (3)

Institutional Repository

journal article

© 2021 Y. Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu