Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences)
Kang, Xuanwu (Chinese Academy of Sciences)
Zheng, Yingkui (Chinese Academy of Sciences)
Wei, Ke (Chinese Academy of Sciences)
Li, Pengfei (Chinese Academy of Sciences)
Wang, Wenbo (Shenzhen Institute of Wide-bandgap Semiconductors)
Liu, Xinyu (Chinese Academy of Sciences)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)

2020

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10⁻⁸ A/cm² at −10 V.

Dry etch
GaN
Inductively coupled plasma (ICP)
Mesa
Quasi-vertical
Schottky barrier diode (SBD)
Sidewall profile

http://resolver.tudelft.nl/uuid:e0a4f1dd-2798-442c-b5c1-e139b49321ac

https://doi.org/10.3390/nano10040657

2079-4991

Nanomaterials, 10 (4), 1-13

Institutional Repository

journal article

© 2020 Y. Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Kouchi Zhang